Presentation 1994/3/18
Switching and memory phenomenon in Langmuir-Blodgett film using a scanning tunneling microscope
Kiyoshi Takimoto, Koji Yano, Katsunori Hatanaka, Ken Eguchi, Takashi Nakagiri,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have tried to miniaturize a metal, LB film/metal structure beyond the limit of lithography by replacing the top electrode with a scanning tunneling microscope (STM) probe.A change in the STM image about 10 nm in diameter was found,when a critical voltage was applied between the probe and the base electrode.The change in the STM image was due to a change in the conductance of LB film.These results lead to the possibility of establishing a high density and huge capacity memory device.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) LB film / scanning tunneling microscope / STM / switching / memory
Paper # OME93-55
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Conference Information
Committee OME
Conference Date 1994/3/18(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Switching and memory phenomenon in Langmuir-Blodgett film using a scanning tunneling microscope
Sub Title (in English)
Keyword(1) LB film
Keyword(2) scanning tunneling microscope
Keyword(3) STM
Keyword(4) switching
Keyword(5) memory
1st Author's Name Kiyoshi Takimoto
1st Author's Affiliation Canon Research Center()
2nd Author's Name Koji Yano
2nd Author's Affiliation Canon Research Center
3rd Author's Name Katsunori Hatanaka
3rd Author's Affiliation Canon Research Center
4th Author's Name Ken Eguchi
4th Author's Affiliation Canon Research Center
5th Author's Name Takashi Nakagiri
5th Author's Affiliation Canon Research Center
Date 1994/3/18
Paper # OME93-55
Volume (vol) vol.93
Number (no) 524
Page pp.pp.-
#Pages 6
Date of Issue