Presentation | 1993/5/24 Photoelectrochemical Memory System Using Azo Compound LB Film A. Fujishima, K. Hashimoto, K. Morigaki, T. Enomoto, F.Liu Z, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A photoelectrochemical memory system is created by combining the photochemical reduction-oxidation of azo compounds in LB film.This novel system has the advantages of storage density up to 10^12 bits/cm^2,non-destructive readout,multiple memory function,rewritability and room-temperature working condition. |
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Paper # | OME93-4 |
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Committee | OME |
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Conference Date | 1993/5/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Photoelectrochemical Memory System Using Azo Compound LB Film |
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1st Author's Name | A. Fujishima |
1st Author's Affiliation | Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo() |
2nd Author's Name | K. Hashimoto |
2nd Author's Affiliation | Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo |
3rd Author's Name | K. Morigaki |
3rd Author's Affiliation | Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo |
4th Author's Name | T. Enomoto |
4th Author's Affiliation | Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo |
5th Author's Name | F.Liu Z |
5th Author's Affiliation | Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo |
Date | 1993/5/24 |
Paper # | OME93-4 |
Volume (vol) | vol.93 |
Number (no) | 61 |
Page | pp.pp.- |
#Pages | 8 |
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