Presentation 1993/5/24
Photoelectrochemical Memory System Using Azo Compound LB Film
A. Fujishima, K. Hashimoto, K. Morigaki, T. Enomoto, F.Liu Z,
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Abstract(in English) A photoelectrochemical memory system is created by combining the photochemical reduction-oxidation of azo compounds in LB film.This novel system has the advantages of storage density up to 10^12 bits/cm^2,non-destructive readout,multiple memory function,rewritability and room-temperature working condition.
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Paper # OME93-4
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Committee OME
Conference Date 1993/5/24(1days)
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Registration To Organic Material Electronics (OME)
Language ENG
Title (in Japanese) (See Japanese page)
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Title (in English) Photoelectrochemical Memory System Using Azo Compound LB Film
Sub Title (in English)
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1st Author's Name A. Fujishima
1st Author's Affiliation Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo()
2nd Author's Name K. Hashimoto
2nd Author's Affiliation Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
3rd Author's Name K. Morigaki
3rd Author's Affiliation Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
4th Author's Name T. Enomoto
4th Author's Affiliation Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
5th Author's Name F.Liu Z
5th Author's Affiliation Depertment of Synthetic Chemistry,Faculty of Engineering,The University of Tokyo
Date 1993/5/24
Paper # OME93-4
Volume (vol) vol.93
Number (no) 61
Page pp.pp.-
#Pages 8
Date of Issue