Presentation 1995/7/26
Deposition of PTCDA Thin Films by Ionized Beam Method
K. Tanaka, H. Usui,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Thin films of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were prepared by ionized beam deposition method. The film deposited showed preferential crystal orientation to (102) plane and the molecules were oriented with the molecular plane in parallel with the substrate surface. Crystal and molecular orientation were enhanced by a proper selection of ion energy in the ionized beam deposition method. The films deposited under such a condition also showed higher anisotropy of electrical conductivity.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ionized beam deposition / PTCDA / Crystal orientation / Molecular orientation / Resistivity anisotropy
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Committee OME
Conference Date 1995/7/26(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deposition of PTCDA Thin Films by Ionized Beam Method
Sub Title (in English)
Keyword(1) Ionized beam deposition
Keyword(2) PTCDA
Keyword(3) Crystal orientation
Keyword(4) Molecular orientation
Keyword(5) Resistivity anisotropy
1st Author's Name K. Tanaka
1st Author's Affiliation Department of Material Systems Engineering, Tokyo University of Agriculture and Technology()
2nd Author's Name H. Usui
2nd Author's Affiliation Department of Material Systems Engineering, Tokyo University of Agriculture and Technology
Date 1995/7/26
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Volume (vol) vol.95
Number (no) 187
Page pp.pp.-
#Pages 6
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