Presentation | 1995/7/26 Structure and Photovoltaic Properties of Silicon Naphthalocyanine Thin Films Y. Ueda, M. Watanabe, H. Yanagi, S. Hayashida, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Bis(alkylsiloxy)2, 3-naphthalocyaninatosilicon derivatives (SiNc) were vapor-deposited on an ITO glass and a cleavage surface of KBr. Structures of a deposited film were investigated by means of UV-VIS spectroscopy, X-ray diffractmetry and electron microscopic observation. SiNc films deposited on an ITO glass were composed of randomly-oriented crystallites. The films deposited on a KBr substrate, on the other hand, grew epitaxially. The photoelectrochemical measurements of the films were performed in cells of the configuration ITO/SiNc/I_3^-, I^-/Pt. The photovoltaic parameters of SiNc films were improved by the control of molecular orientation in the film. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | epitaxy / silicon phthalocyanine / photovoltaic properties |
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Committee | OME |
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Conference Date | 1995/7/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Structure and Photovoltaic Properties of Silicon Naphthalocyanine Thin Films |
Sub Title (in English) | |
Keyword(1) | epitaxy |
Keyword(2) | silicon phthalocyanine |
Keyword(3) | photovoltaic properties |
1st Author's Name | Y. Ueda |
1st Author's Affiliation | Faculty of Engineering Kobe University() |
2nd Author's Name | M. Watanabe |
2nd Author's Affiliation | Faculty of Engineering Kobe University |
3rd Author's Name | H. Yanagi |
3rd Author's Affiliation | Faculty of Engineering Kobe University |
4th Author's Name | S. Hayashida |
4th Author's Affiliation | Hitachi Chem. Co. Ltd. |
Date | 1995/7/26 |
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Volume (vol) | vol.95 |
Number (no) | 187 |
Page | pp.pp.- |
#Pages | 6 |
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