Presentation | 1995/5/19 Dielectric properties of nematic liquid crystals in low frequency regime. S. Murakami, H. Iga, H. Naito, M. Okuda, A. Sugimura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Frequency dependence of the dielectric constant of p-pentyl-p'-cyano-biphenyl has been measured in the low frequency regime. The dielectric loss peak is observed at 1.3×10^<-3>Hz. Since the peak height and position are independent of applied voltage, temperature and ion density, it is concluded that the Helmholtz electric double layer with thickness of 0.63 nm is formed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | liquid crysyal / dielectric relaxation / electric double layer / impurity ion / distribution of relaxation time |
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Conference Information | |
Committee | OME |
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Conference Date | 1995/5/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Dielectric properties of nematic liquid crystals in low frequency regime. |
Sub Title (in English) | |
Keyword(1) | liquid crysyal |
Keyword(2) | dielectric relaxation |
Keyword(3) | electric double layer |
Keyword(4) | impurity ion |
Keyword(5) | distribution of relaxation time |
1st Author's Name | S. Murakami |
1st Author's Affiliation | Department of Physics and Electronics, University of Osaka prefecture() |
2nd Author's Name | H. Iga |
2nd Author's Affiliation | Department of Physics and Electronics, University of Osaka prefecture |
3rd Author's Name | H. Naito |
3rd Author's Affiliation | Department of Physics and Electronics, University of Osaka prefecture |
4th Author's Name | M. Okuda |
4th Author's Affiliation | Department of Physics and Electronics, University of Osaka prefecture |
5th Author's Name | A. Sugimura |
5th Author's Affiliation | Department of Information Systems Engineering, Faculty of Engineering, Osaka Sangyo University |
Date | 1995/5/19 |
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Volume (vol) | vol.95 |
Number (no) | 50 |
Page | pp.pp.- |
#Pages | 4 |
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