Presentation 1996/7/5
High Resolution Electron Energy Loss Spectroscopy on Fullerene Epitaxial Films
Yasunori Fujikawa, Atsushi Koma,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The initial state of the growth of fullerene (C_<60> and C_<70>) epitaxial films on MoS_2 and Si(111)7×7 surface was investigated by using high-resolution electron energy loss spectroscopy (HREELS). The interaction between C_<60> molecules and MoS_2 or Si(111)7×7 surface are clarified. It is revealed that the arrangement of the C_<70> molecules on MoS_2 and Si(111)7×7 surface were different each other and this arrangement determined the arrangements of C_<70> molecules of upper layers.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Fullerenes / Molecular Beam Epitaxy / HREELS / Interface / Arrangement of Molecules
Paper # OME96-34
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Conference Information
Committee OME
Conference Date 1996/7/5(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Resolution Electron Energy Loss Spectroscopy on Fullerene Epitaxial Films
Sub Title (in English)
Keyword(1) Fullerenes
Keyword(2) Molecular Beam Epitaxy
Keyword(3) HREELS
Keyword(4) Interface
Keyword(5) Arrangement of Molecules
1st Author's Name Yasunori Fujikawa
1st Author's Affiliation Department of Chemistry, School of Science, University of Tokyo()
2nd Author's Name Atsushi Koma
2nd Author's Affiliation Department of Chemistry, School of Science, University of Tokyo:Kansai Advanced Research Center, Communications Research Laboratory
Date 1996/7/5
Paper # OME96-34
Volume (vol) vol.96
Number (no) 143
Page pp.pp.-
#Pages 6
Date of Issue