Presentation 1997/1/28
STM/STS analysis of diamond films prepared by OH radical injection
Kazuya Murata, masafumi Ito, masaru Hori, Mineo Hiramatsu, Toshio Goto,
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Abstract(in English) Electronic structure at a surface of diamond film synthesized by a RF CH_3OH plasma CVD with OH radical injection has been investigated. The electronic structure was characterized by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) in an ultra high vacuum (UHV) condition. As a result. the electronic structure was identified as an n-type electronic structure at the surface, where that of diamond films synthesized by a microwave plasma CVD were p-type. Moreover, in the initial growth of diamond, diamond nuclei was successfully distinguished from the underlaying layer by using STS. Consequently, the underlaying layer was identified as amorphous carbon.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) STM / STS / diamond / RF plasma CVD / initial growth
Paper # OME96-85
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Committee OME
Conference Date 1997/1/28(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) STM/STS analysis of diamond films prepared by OH radical injection
Sub Title (in English)
Keyword(1) STM
Keyword(2) STS
Keyword(3) diamond
Keyword(4) RF plasma CVD
Keyword(5) initial growth
1st Author's Name Kazuya Murata
1st Author's Affiliation Department of Quantum Engineering, Nagoya University,()
2nd Author's Name masafumi Ito
2nd Author's Affiliation Department of Quantum Engineering, Nagoya University
3rd Author's Name masaru Hori
3rd Author's Affiliation Department of Quantum Engineering, Nagoya University
4th Author's Name Mineo Hiramatsu
4th Author's Affiliation Meijo Univ.
5th Author's Name Toshio Goto
5th Author's Affiliation Department of Quantum Engineering, Nagoya University
Date 1997/1/28
Paper # OME96-85
Volume (vol) vol.96
Number (no) 502
Page pp.pp.-
#Pages 6
Date of Issue