Presentation 1997/11/21
Negative-Resistance Characteristics of Organic-Dye-Doped Thin-Polymer-Film
Akira Kawamoto, Yasuo Suzuoki, Teruyoshi Mizutani,
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Abstract(in English) In order to develop a new negative-resistance device, a single-layer device of organic-dye-doped insulating polymer was fabricated by dipping. The current-voltage characteristics at room temperature showed remarkable negative resistance. The negative resistance did not depend much on the combination of insulating polymer matrix and dye dopant or on temperature. This suggests that the negative resistance is caused by tunneling transport of holes or electrons. Two possible models are considered for the origin of the negative resistance. One is based on the polarization formed by holes or electrons trapped in the dye molecule. The other is based on the tunneling at the Interface between electrode and dye molecules.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Negative resistance / Organic-dye-doped polymer / Peak current / Tunneling transport / Dye molecule
Paper # OME97-102
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Committee OME
Conference Date 1997/11/21(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Negative-Resistance Characteristics of Organic-Dye-Doped Thin-Polymer-Film
Sub Title (in English)
Keyword(1) Negative resistance
Keyword(2) Organic-dye-doped polymer
Keyword(3) Peak current
Keyword(4) Tunneling transport
Keyword(5) Dye molecule
1st Author's Name Akira Kawamoto
1st Author's Affiliation Department of Electrical Engineering, Fukui National College of Technology()
2nd Author's Name Yasuo Suzuoki
2nd Author's Affiliation Center for Integrated Research in Science and Engineering, Nagoya University
3rd Author's Name Teruyoshi Mizutani
3rd Author's Affiliation Department of Electrical Engineering, Nagoya University
Date 1997/11/21
Paper # OME97-102
Volume (vol) vol.97
Number (no) 394
Page pp.pp.-
#Pages 6
Date of Issue