Presentation | 1997/9/26 Orientational Control of Copper Phthalocyanine Thin Films on Hydrogen-Terminated Si (001) Masakazu Nakamura, Hiroshi Tokumoto, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Copper phthalocyanine thin films were deposited on a hydrogen-terminated vicinal Si (001) surface which contained atomic step rows of around 4nm period. Very large belt-like crystals were sparsely grown at the substrate temperature 140℃, and a continuous film of which thickness was distributed within 16.5±2.5 molecular layers was grown at 60℃. 90% of the molecular columns were estimated to be aligned to across the step rows in the 60℃ film by observing a frictional force image. These preferential orientation was considered to be due to a kind of artificial surface lattices which were formed with the striped 'effective contact area' between the rigid phthalocyanine crystals and the vicinal surfaces. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | silicon / hydrogen-termination / phthalocyanine / vicinal surface / crystal orientation / AFM |
Paper # | OME97-74 |
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Conference Information | |
Committee | OME |
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Conference Date | 1997/9/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Orientational Control of Copper Phthalocyanine Thin Films on Hydrogen-Terminated Si (001) |
Sub Title (in English) | |
Keyword(1) | silicon |
Keyword(2) | hydrogen-termination |
Keyword(3) | phthalocyanine |
Keyword(4) | vicinal surface |
Keyword(5) | crystal orientation |
Keyword(6) | AFM |
1st Author's Name | Masakazu Nakamura |
1st Author's Affiliation | Joint Research Center for Atom Technology Angstrom Technology Partnership:(Present address)Toray Research Center, Inc.() |
2nd Author's Name | Hiroshi Tokumoto |
2nd Author's Affiliation | Joint Research Center for Atom Technology National Institute for Advanced Interdisciplinary Research |
Date | 1997/9/26 |
Paper # | OME97-74 |
Volume (vol) | vol.97 |
Number (no) | 289 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |