Presentation 1997/9/26
Orientational Control of Copper Phthalocyanine Thin Films on Hydrogen-Terminated Si (001)
Masakazu Nakamura, Hiroshi Tokumoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Copper phthalocyanine thin films were deposited on a hydrogen-terminated vicinal Si (001) surface which contained atomic step rows of around 4nm period. Very large belt-like crystals were sparsely grown at the substrate temperature 140℃, and a continuous film of which thickness was distributed within 16.5±2.5 molecular layers was grown at 60℃. 90% of the molecular columns were estimated to be aligned to across the step rows in the 60℃ film by observing a frictional force image. These preferential orientation was considered to be due to a kind of artificial surface lattices which were formed with the striped 'effective contact area' between the rigid phthalocyanine crystals and the vicinal surfaces.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) silicon / hydrogen-termination / phthalocyanine / vicinal surface / crystal orientation / AFM
Paper # OME97-74
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Conference Information
Committee OME
Conference Date 1997/9/26(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Orientational Control of Copper Phthalocyanine Thin Films on Hydrogen-Terminated Si (001)
Sub Title (in English)
Keyword(1) silicon
Keyword(2) hydrogen-termination
Keyword(3) phthalocyanine
Keyword(4) vicinal surface
Keyword(5) crystal orientation
Keyword(6) AFM
1st Author's Name Masakazu Nakamura
1st Author's Affiliation Joint Research Center for Atom Technology Angstrom Technology Partnership:(Present address)Toray Research Center, Inc.()
2nd Author's Name Hiroshi Tokumoto
2nd Author's Affiliation Joint Research Center for Atom Technology National Institute for Advanced Interdisciplinary Research
Date 1997/9/26
Paper # OME97-74
Volume (vol) vol.97
Number (no) 289
Page pp.pp.-
#Pages 6
Date of Issue