Presentation 1997/6/27
NO_x sensors using multi-layer semiconducting thin-film
Tadao Hiwatari, Kazuhiro Hara,
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Abstract(in English) We have developed NO_x sensors using multi-layer semiconducting thin-film. These sensors have a double layer structure composed of metal oxides; the first layer is Fe_2O_3-based thin film which serves as a current conduction region and the second layer is SnO_2-based thin film which is concerned with adsorption, reaction and desorption of gases. The sensors are found to be sensitive to both NO and NO_2 gases. By doping Pd(4mol%) to SnO_2 layer, the sensitivity increases. These sensors detects NO_x at a concentration as low as a few ppm at a relatively low temperature of 250℃. The sensors work for 3months without deterioration by ocasional heat cleaning.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NO_x sensor / gas sensor / thin-film / Fe_2O_3 / SnO_2
Paper # CPM97-38
Date of Issue

Conference Information
Committee OME
Conference Date 1997/6/27(1days)
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Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) NO_x sensors using multi-layer semiconducting thin-film
Sub Title (in English)
Keyword(1) NO_x sensor
Keyword(2) gas sensor
Keyword(3) thin-film
Keyword(4) Fe_2O_3
Keyword(5) SnO_2
1st Author's Name Tadao Hiwatari
1st Author's Affiliation College of Engineering, Tokyo Denki University()
2nd Author's Name Kazuhiro Hara
2nd Author's Affiliation College of Engineering, Tokyo Denki University
Date 1997/6/27
Paper # CPM97-38
Volume (vol) vol.97
Number (no) 144
Page pp.pp.-
#Pages 6
Date of Issue