| Presentation | 2002/9/24 Influence of Silicide-Block and Contact Resistance on Heating of ESD Protection Devices Kazuya MATSUZAWA, Toyoaki MATSUASHI, Hirobumi KAWASHIMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicide block is formed in on-chip ESD protection devices of grounded gate MOSFETs to suppress concentration of electric field. In this paper, simulation results for influences of resistivity and contact resistance of silicide on increase of lattice temperature within the protection devices are presented. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ESD / Protection Device / Silicide Block / Contact Resistance |
| Paper # | VLD2002-79 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2002/9/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of Silicide-Block and Contact Resistance on Heating of ESD Protection Devices |
| Sub Title (in English) | |
| Keyword(1) | ESD |
| Keyword(2) | Protection Device |
| Keyword(3) | Silicide Block |
| Keyword(4) | Contact Resistance |
| 1st Author's Name | Kazuya MATSUZAWA |
| 1st Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation() |
| 2nd Author's Name | Toyoaki MATSUASHI |
| 2nd Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| 3rd Author's Name | Hirobumi KAWASHIMA |
| 3rd Author's Affiliation | Semiconductor Company, Toshiba Corporation |
| Date | 2002/9/24 |
| Paper # | VLD2002-79 |
| Volume (vol) | vol.102 |
| Number (no) | 345 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |