Presentation | 2002/9/24 ESD surge simulation of IC for automobile : ESD surge robustness of IC protection diode Kenji KONO, Ryuichiro ABE, Akiyoshi ASAI, Yasushi HIGUCHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The input-and-output terminal of IC for automobile is exposed to various surges, that is ESD (Electrostatic discharge), L(Inductive)-load surge, and IG (Ignition) pulse surge. Especially, the ESD test of 150Ω, l50pF(hereafter, it's designated as ECU model), 25kV is so severe condition that IC external protection devices, such as Capacitor and power ZD were required. However, in order to reduce the size and cost of ECU (Electronic control Unites), it is indispensable to satisfy the tough ESD condition of 25kV without external protection devices. Then, the ESD analysis of the diode that is suitable for a protection since having no parasitic transistor was performed by the electro-thermal simulation. Consequently, it has been newly cleared that ESD robustness of a diode depends on the lattice temperature of a hot spot. And the optimal built-in protection diode that is proof against 25kV ESD has been realized by the simulation of the dependence of the diode size, diffusion layers, and edge structure, on lattice temperature, respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | IC / ESO / ECU / diode / electro-thermal simulation |
Paper # | VLD2002-78 |
Date of Issue |
Conference Information | |
Committee | VLD |
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Conference Date | 2002/9/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | ESD surge simulation of IC for automobile : ESD surge robustness of IC protection diode |
Sub Title (in English) | |
Keyword(1) | IC |
Keyword(2) | ESO |
Keyword(3) | ECU |
Keyword(4) | diode |
Keyword(5) | electro-thermal simulation |
1st Author's Name | Kenji KONO |
1st Author's Affiliation | Electronics Device R&D Center DENSO CORPORATION() |
2nd Author's Name | Ryuichiro ABE |
2nd Author's Affiliation | Electronics Device R&D Center DENSO CORPORATION |
3rd Author's Name | Akiyoshi ASAI |
3rd Author's Affiliation | Electronics Device R&D Center DENSO CORPORATION |
4th Author's Name | Yasushi HIGUCHI |
4th Author's Affiliation | Electronics Device R&D Center DENSO CORPORATION |
Date | 2002/9/24 |
Paper # | VLD2002-78 |
Volume (vol) | vol.102 |
Number (no) | 345 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |