Presentation 2002/9/24
Statistical Characterization and Modeling of MOSFET Matching Properties
Yoshiyuki SHIMIZU, Mitsuo NAKAMURA, Toshimasa MATSUOKA, Kenji TANIGUCHI,
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Abstract(in English) In this study, we measured the statistical data of MOSFET's characteristics, and modeled matching property. To measure MOSFET's characteristics, the structure with integrated MOSFET array and the peripheral circuits to select one element in the MOSFET array is used to layout a large number of MOSFETs enough to statistically on a small (chip) area. Using this structure, from more than 10,000 MOSFETs' measurement, we obtained the statistical data of threthold voltage and transconductance.
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Keyword(in English) MOSFET / matching properties / threshold voltage / transconductance
Paper # VLD2002-76
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Committee VLD
Conference Date 2002/9/24(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Statistical Characterization and Modeling of MOSFET Matching Properties
Sub Title (in English)
Keyword(1) MOSFET
Keyword(2) matching properties
Keyword(3) threshold voltage
Keyword(4) transconductance
1st Author's Name Yoshiyuki SHIMIZU
1st Author's Affiliation Department of Electronics and Information Systems, Osaka University()
2nd Author's Name Mitsuo NAKAMURA
2nd Author's Affiliation Department of Electronics and Information Systems, Osaka University
3rd Author's Name Toshimasa MATSUOKA
3rd Author's Affiliation Department of Electronics and Information Systems, Osaka University
4th Author's Name Kenji TANIGUCHI
4th Author's Affiliation Department of Electronics and Information Systems, Osaka University
Date 2002/9/24
Paper # VLD2002-76
Volume (vol) vol.102
Number (no) 345
Page pp.pp.-
#Pages 6
Date of Issue