| Presentation | 2002/9/24 Study of High-Frequency Characteristics Description for MOSFETs by Y-parameters Hiroaki UENO, Satoshi JINBOU, Hiroaki KAWANO, Keiichi MORIKAWA, Noriaki NAKAYAMA, Mitiko MIURA-MATTAUSCH, Hans Juergen MATTAUSCH, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Under high-frequency operation, carriers in a MOSFET cannot response immediately to the bias change, but cause delay. This delayed carrier response is caused by the carrier transit time, requiring also capacitive charging time. Up to now this is described phenomenologically with RC delays. The main problem is the difficulty to extract these element values keeping their origin. We intend to extract the essence of phenomena observed under high-frequency condition through analyzing Y-parameters. The Y-parameter calculations are realized by solving the continuity equation together with the current density equation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / Y-parameter / non-quasistatic effect / drift-diffusion approximation |
| Paper # | VLD2002-75 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2002/9/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of High-Frequency Characteristics Description for MOSFETs by Y-parameters |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | Y-parameter |
| Keyword(3) | non-quasistatic effect |
| Keyword(4) | drift-diffusion approximation |
| 1st Author's Name | Hiroaki UENO |
| 1st Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | Satoshi JINBOU |
| 2nd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 3rd Author's Name | Hiroaki KAWANO |
| 3rd Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 4th Author's Name | Keiichi MORIKAWA |
| 4th Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| 5th Author's Name | Noriaki NAKAYAMA |
| 5th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 6th Author's Name | Mitiko MIURA-MATTAUSCH |
| 6th Author's Affiliation | Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 7th Author's Name | Hans Juergen MATTAUSCH |
| 7th Author's Affiliation | Research Center for Nanodevices and Systems, Hiroshima University |
| Date | 2002/9/24 |
| Paper # | VLD2002-75 |
| Volume (vol) | vol.102 |
| Number (no) | 345 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |