| Presentation | 2002/9/23 Quantum Mechanical Corrections in Monte Carlo Device Simulation Hideaki TSUCHIYA, Tanroku MIYOSHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Quantum mechanical effects of carrier transport can play an important role in scaled semi-classical devices into nanometer regime. In this paper, we will discuss quantum mechanical corrections of potential in carrier transport modeling, where a density-gradient-based approach and an effective-potential-based approach are carefully compared. We show strengths and weaknesses of those approaches by demonstrating simulation results using a Monte Carlo method, and then propose a new approach that couples them. The new approach is applied to a nano-scale MOSFET and shown to be a practical way to describe quantum confinement effects considering the an-isotropic nature of Si conduction electrons, and also tunneling behavior leaking into a gate oxide layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | nano-scaled devices / quantum mechanical effects / quantum correction / Monte Carlo simulation |
| Paper # | VLD2002-70 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 2002/9/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Quantum Mechanical Corrections in Monte Carlo Device Simulation |
| Sub Title (in English) | |
| Keyword(1) | nano-scaled devices |
| Keyword(2) | quantum mechanical effects |
| Keyword(3) | quantum correction |
| Keyword(4) | Monte Carlo simulation |
| 1st Author's Name | Hideaki TSUCHIYA |
| 1st Author's Affiliation | Faculty of Engineering, Kobe University() |
| 2nd Author's Name | Tanroku MIYOSHI |
| 2nd Author's Affiliation | Faculty of Engineering, Kobe University |
| Date | 2002/9/23 |
| Paper # | VLD2002-70 |
| Volume (vol) | vol.102 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |