Presentation 2002/9/23
Quantum Mechanical Corrections in Monte Carlo Device Simulation
Hideaki TSUCHIYA, Tanroku MIYOSHI,
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Abstract(in English) Quantum mechanical effects of carrier transport can play an important role in scaled semi-classical devices into nanometer regime. In this paper, we will discuss quantum mechanical corrections of potential in carrier transport modeling, where a density-gradient-based approach and an effective-potential-based approach are carefully compared. We show strengths and weaknesses of those approaches by demonstrating simulation results using a Monte Carlo method, and then propose a new approach that couples them. The new approach is applied to a nano-scale MOSFET and shown to be a practical way to describe quantum confinement effects considering the an-isotropic nature of Si conduction electrons, and also tunneling behavior leaking into a gate oxide layer.
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Keyword(in English) nano-scaled devices / quantum mechanical effects / quantum correction / Monte Carlo simulation
Paper # VLD2002-70
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Committee VLD
Conference Date 2002/9/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Quantum Mechanical Corrections in Monte Carlo Device Simulation
Sub Title (in English)
Keyword(1) nano-scaled devices
Keyword(2) quantum mechanical effects
Keyword(3) quantum correction
Keyword(4) Monte Carlo simulation
1st Author's Name Hideaki TSUCHIYA
1st Author's Affiliation Faculty of Engineering, Kobe University()
2nd Author's Name Tanroku MIYOSHI
2nd Author's Affiliation Faculty of Engineering, Kobe University
Date 2002/9/23
Paper # VLD2002-70
Volume (vol) vol.102
Number (no) 344
Page pp.pp.-
#Pages 6
Date of Issue