Presentation 2002/9/23
TCAD Driven Process Design of Fully-Depleted SOI Transistor
Noriyuki MIURA, Hirotaka KOMATSUBARA, Marie MOCHIZUKI, Hirokazu HAYASHI, Koichi FUKUDA,
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Abstract(in English) We present a TCAD-driven total design methodology of FD-SOI MOSFETs, starting from 0.35 um/2.5V shrinking to 0.15 um/1.5 V. Jumping from 0.35 um to 0.15 um, two-phase experiments are performed effectively supported by exhaustive applications of TCAD local models. SOI specific consideration of SOI film thickness variations (oTsoi) and floating-body effects are the key points for the TCAD driven strategy.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Fully-depleted SOI / Parasitic channel leakage / Parasitic resistance / Floating-body effect / Low power
Paper # VLD2002-66
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Committee VLD
Conference Date 2002/9/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) TCAD Driven Process Design of Fully-Depleted SOI Transistor
Sub Title (in English)
Keyword(1) Fully-depleted SOI
Keyword(2) Parasitic channel leakage
Keyword(3) Parasitic resistance
Keyword(4) Floating-body effect
Keyword(5) Low power
1st Author's Name Noriyuki MIURA
1st Author's Affiliation System LSI Research Division, Silicon Solutions Company, Oki Electric Industry Co., Ltd.()
2nd Author's Name Hirotaka KOMATSUBARA
2nd Author's Affiliation System LSI Research Division, Silicon Solutions Company, Oki Electric Industry Co., Ltd.
3rd Author's Name Marie MOCHIZUKI
3rd Author's Affiliation System LSI Research Division, Silicon Solutions Company, Oki Electric Industry Co., Ltd.
4th Author's Name Hirokazu HAYASHI
4th Author's Affiliation System LSI Research Division, Silicon Solutions Company, Oki Electric Industry Co., Ltd.
5th Author's Name Koichi FUKUDA
5th Author's Affiliation System LSI Research Division, Silicon Solutions Company, Oki Electric Industry Co., Ltd.
Date 2002/9/23
Paper # VLD2002-66
Volume (vol) vol.102
Number (no) 344
Page pp.pp.-
#Pages 6
Date of Issue