| Presentation | 2002/9/23 Analysis of The Reverse Narrow Channel Effect of Submicron MOSFETs : The Effects of The High-K Gate Dielectrics Shoji WAKAHARA, Yasuyuki OHKURA, Hirotaka AMAKAWA, Kenji NISHI, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the reverse narrow channel effect (RNCE) of high-K gate dielectric MOSFETs, and found that the RNCE depends on the fringe capacitance and the physical thickness of the gate dielectric. The RNCE depends on the permittivity of the gate dielectric. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / reverse narrow channel effect / high-K gate dielectric / EOT / fringe capacitance / physical thickness |
| Paper # | VLD2002-64 |
| Date of Issue |
| Conference Information | |
| Committee | VLD |
|---|---|
| Conference Date | 2002/9/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of The Reverse Narrow Channel Effect of Submicron MOSFETs : The Effects of The High-K Gate Dielectrics |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | reverse narrow channel effect |
| Keyword(3) | high-K gate dielectric |
| Keyword(4) | EOT |
| Keyword(5) | fringe capacitance |
| Keyword(6) | physical thickness |
| 1st Author's Name | Shoji WAKAHARA |
| 1st Author's Affiliation | Semiconductor Leading Edge Technologies, Inc.() |
| 2nd Author's Name | Yasuyuki OHKURA |
| 2nd Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
| 3rd Author's Name | Hirotaka AMAKAWA |
| 3rd Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
| 4th Author's Name | Kenji NISHI |
| 4th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. |
| Date | 2002/9/23 |
| Paper # | VLD2002-64 |
| Volume (vol) | vol.102 |
| Number (no) | 344 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |