Presentation 1999/8/27
A Simple Model for Reverse Short Channel Effect of Threshold Voltage on MOSFET
Hirokazu Hayashi, Noriyuki Miura, Hirotaka Komatsubara, Koichi Fukuda,
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Abstract(in English) We propose an effective model which can reproduce reverse short channel effect (RSCE) of threshold voltage (Vth) on MOSFET using a conventional process simulator which solves one equation for each impurity. The proposed model includes the physics in which RSCE is due to the pile up of channel dopant at Si/SiO2 surface. We also report the application to actual device design using our model. The calculation cost is much less than pair deffusion model, and the device design in acceptable turn around time is possible.
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Keyword(in English) RSCE / Simple Model / Dopant Pile Up / Threshold Voltage
Paper # VLD99-61
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Committee VLD
Conference Date 1999/8/27(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Simple Model for Reverse Short Channel Effect of Threshold Voltage on MOSFET
Sub Title (in English)
Keyword(1) RSCE
Keyword(2) Simple Model
Keyword(3) Dopant Pile Up
Keyword(4) Threshold Voltage
1st Author's Name Hirokazu Hayashi
1st Author's Affiliation OKI Electric Industry Co., Ltd.()
2nd Author's Name Noriyuki Miura
2nd Author's Affiliation OKI Electric Industry Co., Ltd.
3rd Author's Name Hirotaka Komatsubara
3rd Author's Affiliation OKI Electric Industry Co., Ltd.
4th Author's Name Koichi Fukuda
4th Author's Affiliation OKI Electric Industry Co., Ltd.
Date 1999/8/27
Paper # VLD99-61
Volume (vol) vol.99
Number (no) 262
Page pp.pp.-
#Pages 6
Date of Issue