Presentation | 1999/8/27 A Simple Model for Reverse Short Channel Effect of Threshold Voltage on MOSFET Hirokazu Hayashi, Noriyuki Miura, Hirotaka Komatsubara, Koichi Fukuda, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We propose an effective model which can reproduce reverse short channel effect (RSCE) of threshold voltage (Vth) on MOSFET using a conventional process simulator which solves one equation for each impurity. The proposed model includes the physics in which RSCE is due to the pile up of channel dopant at Si/SiO2 surface. We also report the application to actual device design using our model. The calculation cost is much less than pair deffusion model, and the device design in acceptable turn around time is possible. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RSCE / Simple Model / Dopant Pile Up / Threshold Voltage |
Paper # | VLD99-61 |
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Committee | VLD |
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Conference Date | 1999/8/27(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Simple Model for Reverse Short Channel Effect of Threshold Voltage on MOSFET |
Sub Title (in English) | |
Keyword(1) | RSCE |
Keyword(2) | Simple Model |
Keyword(3) | Dopant Pile Up |
Keyword(4) | Threshold Voltage |
1st Author's Name | Hirokazu Hayashi |
1st Author's Affiliation | OKI Electric Industry Co., Ltd.() |
2nd Author's Name | Noriyuki Miura |
2nd Author's Affiliation | OKI Electric Industry Co., Ltd. |
3rd Author's Name | Hirotaka Komatsubara |
3rd Author's Affiliation | OKI Electric Industry Co., Ltd. |
4th Author's Name | Koichi Fukuda |
4th Author's Affiliation | OKI Electric Industry Co., Ltd. |
Date | 1999/8/27 |
Paper # | VLD99-61 |
Volume (vol) | vol.99 |
Number (no) | 262 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |