| Presentation | 1998/10/23 A proposal of a high-speed quasi-two dimensional method for MOSFET device simulation Y. Ohkura, M. Nanba, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A method is proposed to calculate the drain current of a long channel MOSFET from the one-dimensional Poisson result for a given one-demensional impurity profile. By including both the drift and diffusion current, the calculated results of our method agree those calculated by two-dimensional simulation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Device Simulation / MOSFET / Drain current / Subthreshold Characteristics |
| Paper # | VLD98-98,ED98-123,SDM98-159,ICD98-229 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 1998/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A proposal of a high-speed quasi-two dimensional method for MOSFET device simulation |
| Sub Title (in English) | |
| Keyword(1) | Device Simulation |
| Keyword(2) | MOSFET |
| Keyword(3) | Drain current |
| Keyword(4) | Subthreshold Characteristics |
| 1st Author's Name | Y. Ohkura |
| 1st Author's Affiliation | Semiconductor Technology Development Center, Hitachi Ltd.() |
| 2nd Author's Name | M. Nanba |
| 2nd Author's Affiliation | Semiconductor Technology Development Center, Hitachi Ltd. |
| Date | 1998/10/23 |
| Paper # | VLD98-98,ED98-123,SDM98-159,ICD98-229 |
| Volume (vol) | vol.98 |
| Number (no) | 346 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |