| Presentation | 1998/10/23 High Voltage MOS Device Modeling with BSIM3v3 and its Parameter Extraction Technique T. Myono, S. Kikuchi, K. Iwatsu, E. Nishibe, T. Suzuki, Y. Sasaki, K. Itoh, H. Kobayashi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper presents a new technique for modeling High-Voltage(HV)MOS devices accurately with the BSIM3v3 SPICE model. Standard SPICE models do not model the voltage dependency of R_s and R_d in HV MOS devices ; this causes large discrepancies between the simulated and measured I-V characteristics of HV MOS devices. We propose to assign physical meanings and values different from the original BSIM3v3 model to three of its parameters to represent the voltage dependency of R_s and R_d. With this method, we have succeeded in highly accurate parameter extraction and the simulated I-V characteristics of HV MOS divices using the extracted parameters match the measured results well. The relationship between the proposed modeling technique and the physical mechanism of HV MOS devices is also discussed based on measured and device simulation results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-voltage MOS / BSIM3 / SPICE model / Modeling |
| Paper # | VLD98-97,ED98-122,SDM98-158,ICD98-228 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 1998/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Voltage MOS Device Modeling with BSIM3v3 and its Parameter Extraction Technique |
| Sub Title (in English) | |
| Keyword(1) | High-voltage MOS |
| Keyword(2) | BSIM3 |
| Keyword(3) | SPICE model |
| Keyword(4) | Modeling |
| 1st Author's Name | T. Myono |
| 1st Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd.() |
| 2nd Author's Name | S. Kikuchi |
| 2nd Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
| 3rd Author's Name | K. Iwatsu |
| 3rd Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
| 4th Author's Name | E. Nishibe |
| 4th Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
| 5th Author's Name | T. Suzuki |
| 5th Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
| 6th Author's Name | Y. Sasaki |
| 6th Author's Affiliation | Gunma University |
| 7th Author's Name | K. Itoh |
| 7th Author's Affiliation | Gunma University |
| 8th Author's Name | H. Kobayashi |
| 8th Author's Affiliation | Gunma University |
| Date | 1998/10/23 |
| Paper # | VLD98-97,ED98-122,SDM98-158,ICD98-228 |
| Volume (vol) | vol.98 |
| Number (no) | 346 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |