Presentation | 1998/10/23 Numerical Simulation of GaAs MESFET on Semi-insulating Substrate under Large Signal Operation Yuji Takahashi, Kazuaki Kunihiro, Yasuo Ohno, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It is well known that semi-insulating substrates cause Gds frequency dispersions in GaAs MESFETs, when they are measured with a small sinusoidal signal. However, more serious problem caused by substrate deep traps will be the shift of operation point at large signals. We analyzed this phenomenon with cyclic bias device simulator, which search for the steady states under cyclic biases. It is clarified that the shift is caused by the acceleration in electron capture rate at high drain biases, whereas the emission rate is independent on the drain bias. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Device Simulator / Shift of Operation Point / Cyclic Bias / SRH Statistics / MESFET |
Paper # | VLD98-96,ED98-121,SDM98-157,ICD98-227 |
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Committee | VLD |
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Conference Date | 1998/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Numerical Simulation of GaAs MESFET on Semi-insulating Substrate under Large Signal Operation |
Sub Title (in English) | |
Keyword(1) | Device Simulator |
Keyword(2) | Shift of Operation Point |
Keyword(3) | Cyclic Bias |
Keyword(4) | SRH Statistics |
Keyword(5) | MESFET |
1st Author's Name | Yuji Takahashi |
1st Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation() |
2nd Author's Name | Kazuaki Kunihiro |
2nd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
3rd Author's Name | Yasuo Ohno |
3rd Author's Affiliation | Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation |
Date | 1998/10/23 |
Paper # | VLD98-96,ED98-121,SDM98-157,ICD98-227 |
Volume (vol) | vol.98 |
Number (no) | 346 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |