Presentation 1998/10/23
Numerical Simulation of GaAs MESFET on Semi-insulating Substrate under Large Signal Operation
Yuji Takahashi, Kazuaki Kunihiro, Yasuo Ohno,
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Abstract(in English) It is well known that semi-insulating substrates cause Gds frequency dispersions in GaAs MESFETs, when they are measured with a small sinusoidal signal. However, more serious problem caused by substrate deep traps will be the shift of operation point at large signals. We analyzed this phenomenon with cyclic bias device simulator, which search for the steady states under cyclic biases. It is clarified that the shift is caused by the acceleration in electron capture rate at high drain biases, whereas the emission rate is independent on the drain bias.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Device Simulator / Shift of Operation Point / Cyclic Bias / SRH Statistics / MESFET
Paper # VLD98-96,ED98-121,SDM98-157,ICD98-227
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Committee VLD
Conference Date 1998/10/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Numerical Simulation of GaAs MESFET on Semi-insulating Substrate under Large Signal Operation
Sub Title (in English)
Keyword(1) Device Simulator
Keyword(2) Shift of Operation Point
Keyword(3) Cyclic Bias
Keyword(4) SRH Statistics
Keyword(5) MESFET
1st Author's Name Yuji Takahashi
1st Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation()
2nd Author's Name Kazuaki Kunihiro
2nd Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
3rd Author's Name Yasuo Ohno
3rd Author's Affiliation Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
Date 1998/10/23
Paper # VLD98-96,ED98-121,SDM98-157,ICD98-227
Volume (vol) vol.98
Number (no) 346
Page pp.pp.-
#Pages 6
Date of Issue