| Presentation | 1998/10/23 Process and Device Simulation of MOSFET Snapback Characteristics N. Miura, K. Hisaka, K. Fukuda, Y. Fukuda, K. Nishi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In scaled-down process, high ESD(electrostatic discharge)performance is required for protection devices. In realistic stage of LSI development, process conditions are often changed after designing protection circuit. From requirement of fast LSI market, it is important to reduce additional costs and additional delay of development arising from these process modifications. In this paper, we propose a new strategy to predict snapback characteristics of protection MOSFETs in modefied process. This strategy is effective to reduce additional costs by offering quantitative insights of HBM(Human Body Model)properties. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Electrostatic discharge(ESD) / Snapback / MOSFET / Process and Device simulations |
| Paper # | VLD98-95,ED98-120,SDM98-156,ICD98-226 |
| Date of Issue |
| Conference Information | |
| Committee | VLD |
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| Conference Date | 1998/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Process and Device Simulation of MOSFET Snapback Characteristics |
| Sub Title (in English) | |
| Keyword(1) | Electrostatic discharge(ESD) |
| Keyword(2) | Snapback |
| Keyword(3) | MOSFET |
| Keyword(4) | Process and Device simulations |
| 1st Author's Name | N. Miura |
| 1st Author's Affiliation | VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | K. Hisaka |
| 2nd Author's Affiliation | VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | K. Fukuda |
| 3rd Author's Affiliation | VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Y. Fukuda |
| 4th Author's Affiliation | VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | K. Nishi |
| 5th Author's Affiliation | VLSI Reserch & Development Center, Oki Electric Industry Co., Ltd. |
| Date | 1998/10/23 |
| Paper # | VLD98-95,ED98-120,SDM98-156,ICD98-226 |
| Volume (vol) | vol.98 |
| Number (no) | 346 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |