Presentation | 1998/10/23 A Threshold Voltage Model of SOI MOSFET's T. Toyabe, L.V. Kalachev, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Potential distribution in ultra-thin SOI MOSFET's is obtained by the asymptotic method, and an analytic threshold voltage model is derived from the solution. The validity of the model has been verified comparing the results of two-dimensional numerical simulation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | SOI MOSFET / Threshold voltage / Asymptotic method |
Paper # | VLD98-94,ED98-119,SDM98-155,ICD98-225 |
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Conference Information | |
Committee | VLD |
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Conference Date | 1998/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Threshold Voltage Model of SOI MOSFET's |
Sub Title (in English) | |
Keyword(1) | SOI MOSFET |
Keyword(2) | Threshold voltage |
Keyword(3) | Asymptotic method |
1st Author's Name | T. Toyabe |
1st Author's Affiliation | Dept.Information and Computer Sciences, Toyo University() |
2nd Author's Name | L.V. Kalachev |
2nd Author's Affiliation | Dept.Mathematical Sciences, The University of Montana |
Date | 1998/10/23 |
Paper # | VLD98-94,ED98-119,SDM98-155,ICD98-225 |
Volume (vol) | vol.98 |
Number (no) | 346 |
Page | pp.pp.- |
#Pages | 6 |
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