Presentation 1998/10/23
A Threshold Voltage Model of SOI MOSFET's
T. Toyabe, L.V. Kalachev,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Potential distribution in ultra-thin SOI MOSFET's is obtained by the asymptotic method, and an analytic threshold voltage model is derived from the solution. The validity of the model has been verified comparing the results of two-dimensional numerical simulation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI MOSFET / Threshold voltage / Asymptotic method
Paper # VLD98-94,ED98-119,SDM98-155,ICD98-225
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Conference Information
Committee VLD
Conference Date 1998/10/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Threshold Voltage Model of SOI MOSFET's
Sub Title (in English)
Keyword(1) SOI MOSFET
Keyword(2) Threshold voltage
Keyword(3) Asymptotic method
1st Author's Name T. Toyabe
1st Author's Affiliation Dept.Information and Computer Sciences, Toyo University()
2nd Author's Name L.V. Kalachev
2nd Author's Affiliation Dept.Mathematical Sciences, The University of Montana
Date 1998/10/23
Paper # VLD98-94,ED98-119,SDM98-155,ICD98-225
Volume (vol) vol.98
Number (no) 346
Page pp.pp.-
#Pages 6
Date of Issue