Presentation 1998/10/23
A Self-Consistent Analysis of Two-Dimensional Electron Gas in HEMT structure using Monte Carlo Simulation II
T. Fukada, M. Nakazato, Y. Kohyama, N. Tanino,
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Abstract(in English) We have been developing the Monte Carlo device simulator which can simulate both two-dimensional and three-dimensional electrons in real space. In this report, by investigating precisely the distribution of two-dimensional electrons and three-dimensional electrons, it was cleared that the HEMT, which was also called two-dimensional electron gas transistor, was operated by three-dimensional electrons in actual. Furthermore, it was cleared that the ratio of two and three dimensional electron density depends sensitively on the boundary energy of two and three dimensional electrons, of which boundary energy was introduced generally to distinguish two and three dimensional electrons.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Two-dimensional electron gas / HEMT / Monte Carlo simulation / Device simulation
Paper # VLD98-92,ED98-117,SDM98-153,ICD98-223
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Committee VLD
Conference Date 1998/10/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Self-Consistent Analysis of Two-Dimensional Electron Gas in HEMT structure using Monte Carlo Simulation II
Sub Title (in English)
Keyword(1) Two-dimensional electron gas
Keyword(2) HEMT
Keyword(3) Monte Carlo simulation
Keyword(4) Device simulation
1st Author's Name T. Fukada
1st Author's Affiliation Computational Engineering I, Fuji Research Institute Corporation()
2nd Author's Name M. Nakazato
2nd Author's Affiliation Computational Engineering I, Fuji Research Institute Corporation
3rd Author's Name Y. Kohyama
3rd Author's Affiliation Computational Engineering I, Fuji Research Institute Corporation
4th Author's Name N. Tanino
4th Author's Affiliation High Frequency and Optical Semiconductor Div..Mitsubishi Electric Corporation
Date 1998/10/23
Paper # VLD98-92,ED98-117,SDM98-153,ICD98-223
Volume (vol) vol.98
Number (no) 346
Page pp.pp.-
#Pages 8
Date of Issue