Presentation | 1998/10/23 A Self-Consistent Analysis of Two-Dimensional Electron Gas in HEMT structure using Monte Carlo Simulation II T. Fukada, M. Nakazato, Y. Kohyama, N. Tanino, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have been developing the Monte Carlo device simulator which can simulate both two-dimensional and three-dimensional electrons in real space. In this report, by investigating precisely the distribution of two-dimensional electrons and three-dimensional electrons, it was cleared that the HEMT, which was also called two-dimensional electron gas transistor, was operated by three-dimensional electrons in actual. Furthermore, it was cleared that the ratio of two and three dimensional electron density depends sensitively on the boundary energy of two and three dimensional electrons, of which boundary energy was introduced generally to distinguish two and three dimensional electrons. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Two-dimensional electron gas / HEMT / Monte Carlo simulation / Device simulation |
Paper # | VLD98-92,ED98-117,SDM98-153,ICD98-223 |
Date of Issue |
Conference Information | |
Committee | VLD |
---|---|
Conference Date | 1998/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | VLSI Design Technologies (VLD) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Self-Consistent Analysis of Two-Dimensional Electron Gas in HEMT structure using Monte Carlo Simulation II |
Sub Title (in English) | |
Keyword(1) | Two-dimensional electron gas |
Keyword(2) | HEMT |
Keyword(3) | Monte Carlo simulation |
Keyword(4) | Device simulation |
1st Author's Name | T. Fukada |
1st Author's Affiliation | Computational Engineering I, Fuji Research Institute Corporation() |
2nd Author's Name | M. Nakazato |
2nd Author's Affiliation | Computational Engineering I, Fuji Research Institute Corporation |
3rd Author's Name | Y. Kohyama |
3rd Author's Affiliation | Computational Engineering I, Fuji Research Institute Corporation |
4th Author's Name | N. Tanino |
4th Author's Affiliation | High Frequency and Optical Semiconductor Div..Mitsubishi Electric Corporation |
Date | 1998/10/23 |
Paper # | VLD98-92,ED98-117,SDM98-153,ICD98-223 |
Volume (vol) | vol.98 |
Number (no) | 346 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |