Presentation 1998/10/23
Simulation Analysis of SCM Measurements
K Matsuzawa, Y Oowaki, M Nakamura, N Aoki, I Mizushima,
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Abstract(in English) The accuracy of SCM(scanning capacitance microscopy)in two-dimensional impurity profiling for an nMOSFET has been evaluated by measurements and process/device simulations. It is revealed that SCM signals could be modulated by the carrier depletion in the pn junction, an edge effect at the Si substrate edge, and the work function of the gate electrode. The SCM is shown to give the depth and lateral extent of impurity profile at least for the single source/drain diffusion layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SCM / simulation
Paper # VLD98-90,ED98-115,SDM98-151,ICD98-221
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Conference Information
Committee VLD
Conference Date 1998/10/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation Analysis of SCM Measurements
Sub Title (in English)
Keyword(1) SCM
Keyword(2) simulation
1st Author's Name K Matsuzawa
1st Author's Affiliation Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation()
2nd Author's Name Y Oowaki
2nd Author's Affiliation Advanced Semiconductor Devices Research Laboratories, Toshiba Corporation
3rd Author's Name M Nakamura
3rd Author's Affiliation Surface Science Laboratories, Toray Research Center, Inc.
4th Author's Name N Aoki
4th Author's Affiliation Microelectronics Engineering Laboratories, Toshiba Corporation
5th Author's Name I Mizushima
5th Author's Affiliation Microelectronics Engineering Laboratories, Toshiba Corporation
Date 1998/10/23
Paper # VLD98-90,ED98-115,SDM98-151,ICD98-221
Volume (vol) vol.98
Number (no) 346
Page pp.pp.-
#Pages 5
Date of Issue