Presentation 1998/10/23
A New Model of Phosphorus Distribution in the SOI Structure
T Ishiyama, S Matsumoto, T Sakai, T yachi,
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Abstract(in English) We studied phosphorus distribution in the SOI structure and proposed a phosphorus distribution model after anneal, that can explain pile-up in the SOI structure. Simulation results using the proposed model showed its usefulness in estimating the phsphorus concentrations in the SOI structure.
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Keyword(in English) phosphorus / pile-up / simulation / dopant / anneal / profile
Paper # VLD98-89,ED98-114,SDM98-150,ICD98-220
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Conference Information
Committee VLD
Conference Date 1998/10/23(1days)
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Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A New Model of Phosphorus Distribution in the SOI Structure
Sub Title (in English)
Keyword(1) phosphorus
Keyword(2) pile-up
Keyword(3) simulation
Keyword(4) dopant
Keyword(5) anneal
Keyword(6) profile
1st Author's Name T Ishiyama
1st Author's Affiliation NTT Integrated Information & Energy Systems Laboratories()
2nd Author's Name S Matsumoto
2nd Author's Affiliation NTT Integrated Information & Energy Systems Laboratories
3rd Author's Name T Sakai
3rd Author's Affiliation NTT Integrated Information & Energy Systems Laboratories
4th Author's Name T yachi
4th Author's Affiliation NTT Integrated Information & Energy Systems Laboratories
Date 1998/10/23
Paper # VLD98-89,ED98-114,SDM98-150,ICD98-220
Volume (vol) vol.98
Number (no) 346
Page pp.pp.-
#Pages 6
Date of Issue