Presentation 1998/10/23
Profile Measurement and Simulation of Impurity Diffusion in SOI Substrate
Yasushi Ieki, Hiroshi Asai, Hideo Uchida, Masaya Ichimura, Chunlin Shao, Eisuke Arai,
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Abstract(in English) This paper reports profile measurement methods of diffused impurity profile and simulation parameters of phosphorus diffusion in SOI substrates. At first, we compared three measurement methods(SIMS, Spreading resistance(SR), 4point probe/anodic oxidation). In SR method, we discuss the relationship between SR and junction depth. Using measured phosphorus diffusion profiles, the main diffusion parameters involved in the phosphorus-point defect pair diffusion model are determined as follows : f_(share of the interstitial mechanism)=0.85, D_I(diffusivity of interstitial Si)=1.83×10^<-4>exp(-1.58/kt), K_(reconbination velocity at oxide interface)=4.2×10^<-6>exp(1.75/kT).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SOI / simulation / SR method / phosphorus diffusion / point defect / pair diffusion model
Paper # VLD98-88,ED98-113,SDM98-149,ICD98-219
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Conference Information
Committee VLD
Conference Date 1998/10/23(1days)
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Paper Information
Registration To VLSI Design Technologies (VLD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Profile Measurement and Simulation of Impurity Diffusion in SOI Substrate
Sub Title (in English)
Keyword(1) SOI
Keyword(2) simulation
Keyword(3) SR method
Keyword(4) phosphorus diffusion
Keyword(5) point defect
Keyword(6) pair diffusion model
1st Author's Name Yasushi Ieki
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Hiroshi Asai
2nd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
3rd Author's Name Hideo Uchida
3rd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
4th Author's Name Masaya Ichimura
4th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
5th Author's Name Chunlin Shao
5th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
6th Author's Name Eisuke Arai
6th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1998/10/23
Paper # VLD98-88,ED98-113,SDM98-149,ICD98-219
Volume (vol) vol.98
Number (no) 346
Page pp.pp.-
#Pages 7
Date of Issue