| Presentation | 1998/10/23 Calibration of TCAD for sub quarter micron MOSFET simulation Osamu Nishio, Masahiro Takenaka, Nobuyuki Ohminami, Akio Kawamura, Katsumasa Fujii, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to make TCAD predictable for sub quarter micron MOSFET, we studied physical models and calibrated their parameters. By using impurity clustering models(transient clustering and equilibrium clustering), simulation of high dose impurity diffusion agreed with SIMS measurement. Furthermore, we studied about recombination rates of point defects at Si/SiO_2 interface and pileup of impurity, and we got good agreement between simulation results and measurement data of reverse short channel effect. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | TCAD / impurity diffusion / point defects / clustering / recombination / reverse short channel effect |
| Paper # | VLD98-87,ED98-112,SDM98-148,ICD98-218 |
| Date of Issue |
| Conference Information | |
| Committee | VLD |
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| Conference Date | 1998/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Calibration of TCAD for sub quarter micron MOSFET simulation |
| Sub Title (in English) | |
| Keyword(1) | TCAD |
| Keyword(2) | impurity diffusion |
| Keyword(3) | point defects |
| Keyword(4) | clustering |
| Keyword(5) | recombination |
| Keyword(6) | reverse short channel effect |
| 1st Author's Name | Osamu Nishio |
| 1st Author's Affiliation | VLSI Development Laboratories, IC Group, Sharp Corporation() |
| 2nd Author's Name | Masahiro Takenaka |
| 2nd Author's Affiliation | VLSI Development Laboratories, IC Group, Sharp Corporation |
| 3rd Author's Name | Nobuyuki Ohminami |
| 3rd Author's Affiliation | VLSI Development Laboratories, IC Group, Sharp Corporation |
| 4th Author's Name | Akio Kawamura |
| 4th Author's Affiliation | VLSI Development Laboratories, IC Group, Sharp Corporation |
| 5th Author's Name | Katsumasa Fujii |
| 5th Author's Affiliation | VLSI Development Laboratories, IC Group, Sharp Corporation |
| Date | 1998/10/23 |
| Paper # | VLD98-87,ED98-112,SDM98-148,ICD98-218 |
| Volume (vol) | vol.98 |
| Number (no) | 346 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |