Presentation 1995/9/14
Two-Dimensional DC and Transient Simulation of GaAs MESFET Considering Surface-State Effect
T. Yamada, K. Satoh, K. Horio,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Effects of surface states on I-V curves and turn-on characteristics in GaAs MESFETs are studied by 2-D simulation. These characteristics are essentially determined by deep-acceptor-like state. Depending on whether it acts as an electron trap or a hole trap, the turn-on characteristics change drastically. Physical mechanism of the slow transients due to surface states is discussed in detail, and a way to eliminate the gate-lag is also described.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAs MESFET / surface state / device simulation / gate lag / hole trap
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Committee VLD
Conference Date 1995/9/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Two-Dimensional DC and Transient Simulation of GaAs MESFET Considering Surface-State Effect
Sub Title (in English)
Keyword(1) GaAs MESFET
Keyword(2) surface state
Keyword(3) device simulation
Keyword(4) gate lag
Keyword(5) hole trap
1st Author's Name T. Yamada
1st Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology()
2nd Author's Name K. Satoh
2nd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
3rd Author's Name K. Horio
3rd Author's Affiliation Faculty of Systems Engineering, Shibaura Institute of Technology
Date 1995/9/14
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Volume (vol) vol.95
Number (no) 231
Page pp.pp.-
#Pages 6
Date of Issue