| Presentation | 1996/9/27 Physical model for breakdown simulation K. Matsuzawa, Y. Oowaki, N. Aoki, N. Shigyo, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We study the influence of physical models on breakdown simulation. We consider the impact ionization and band-to-band tunneling (BBT) current. For calculation of impact ionization rate, we apply a model unifying surface and bulk ionization rate. For calculation of BBT probability, we use the modified Kane's model. Under on-states, the impact ionization is dominant for accuracy of breakdown simulation. Especially, the unified model is available for single S/D pMOSFET and LDD structures. On the other hand, BBT is dominant under off-states and for field isolation regions. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | breakdown / simulation / impact ionization / band-to-band tunneling |
| Paper # | VLD96-47,ED96-93,SDM96-103 |
| Date of Issue |
| Conference Information | |
| Committee | VLD |
|---|---|
| Conference Date | 1996/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Physical model for breakdown simulation |
| Sub Title (in English) | |
| Keyword(1) | breakdown |
| Keyword(2) | simulation |
| Keyword(3) | impact ionization |
| Keyword(4) | band-to-band tunneling |
| 1st Author's Name | K. Matsuzawa |
| 1st Author's Affiliation | ULSI Research Laboratories, Toshiba Corporation() |
| 2nd Author's Name | Y. Oowaki |
| 2nd Author's Affiliation | ULSI Research Laboratories, Toshiba Corporation |
| 3rd Author's Name | N. Aoki |
| 3rd Author's Affiliation | Device Engineering Laboratory, Toshiba Corporaion |
| 4th Author's Name | N. Shigyo |
| 4th Author's Affiliation | Device Engineering Laboratory, Toshiba Corporaion |
| Date | 1996/9/27 |
| Paper # | VLD96-47,ED96-93,SDM96-103 |
| Volume (vol) | vol.96 |
| Number (no) | 259 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |