| Presentation | 1996/9/27 Design parameter dependence and optimization of drain characteristics of DTMOS S. Komatsu, R. Ikeno, H. Ito, K. Asada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated drain current characteristics of DTMOS using 3-dimensional device simulator. We found out that as the gate and the body are connected at the side of the channel in DTMOS, the characteristics of DTMOS is varied among each position in the direction of gate width. In this paper, we analyzed the design parameter dependence of DTMOS using device simulator and suggested a method of optimizing the design parameters. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VLSI / SOI / DTMOS / Device Simulation / Threshold Voltage |
| Paper # | VLD96-43,ED96-89,SDM96-99 |
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| Conference Information | |
| Committee | VLD |
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| Conference Date | 1996/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | VLSI Design Technologies (VLD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design parameter dependence and optimization of drain characteristics of DTMOS |
| Sub Title (in English) | |
| Keyword(1) | VLSI |
| Keyword(2) | SOI |
| Keyword(3) | DTMOS |
| Keyword(4) | Device Simulation |
| Keyword(5) | Threshold Voltage |
| 1st Author's Name | S. Komatsu |
| 1st Author's Affiliation | Department of Electronic Engineering, University of Tokyo() |
| 2nd Author's Name | R. Ikeno |
| 2nd Author's Affiliation | Department of Electronic Engineering, University of Tokyo |
| 3rd Author's Name | H. Ito |
| 3rd Author's Affiliation | Department of Electronic Engineering, University of Tokyo |
| 4th Author's Name | K. Asada |
| 4th Author's Affiliation | Department of Electronic Engineering, University of Tokyo |
| Date | 1996/9/27 |
| Paper # | VLD96-43,ED96-89,SDM96-99 |
| Volume (vol) | vol.96 |
| Number (no) | 259 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |