| Presentation | 1994/12/16 Fractal analysis of nano-structure pattern formed on silicon surfaces through anodization Masao Hayashi, Yoshinori Hayakawa, Yasuji Sawada, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | When a silicon anode was etched electrochemically in HF aqueous solution,stability of the interface denpended on experimental conditions:Porous silicon layer formed on silicon surfaces for low applied potential,while the interfarce was kept flat for high applied potential.In this report,controlling anodic potential,we found that the first derivatice of I-V curve discontinuity at the transition point between the two regime,and this property did not depend on HF concentration.We also found that self-affine pattern formed on silicon surfaces near the point,and characterized the pattern with Hurst exponent. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | anodization / self-affine / Hurst exponent / porous silicon |
| Paper # | NLP94-78 |
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| Conference Information | |
| Committee | NLP |
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| Conference Date | 1994/12/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Nonlinear Problems (NLP) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fractal analysis of nano-structure pattern formed on silicon surfaces through anodization |
| Sub Title (in English) | |
| Keyword(1) | anodization |
| Keyword(2) | self-affine |
| Keyword(3) | Hurst exponent |
| Keyword(4) | porous silicon |
| 1st Author's Name | Masao Hayashi |
| 1st Author's Affiliation | Research Institute of Electrical Communication,Tohoku University() |
| 2nd Author's Name | Yoshinori Hayakawa |
| 2nd Author's Affiliation | Research Institute of Electrical Communication,Tohoku University |
| 3rd Author's Name | Yasuji Sawada |
| 3rd Author's Affiliation | Research Institute of Electrical Communication,Tohoku University |
| Date | 1994/12/16 |
| Paper # | NLP94-78 |
| Volume (vol) | vol.94 |
| Number (no) | 418 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |