Presentation 1995/9/29
Monolithic Semiconductor Devices Integrated with EIectroabsorption Modulators for l00 Gbit/s Pulse Generation
Kenji Sato, Kunishige Oe,
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Abstract(in English) Actively mode-locked lasers and optical time-division multiplexers integrated with electroabsorption modulators have been fabricated using strained-InGaAsP multiple quantum wells. The mode-locked laser produces pulses as short as 2.6 ps at a repetition rate of 20 GHz. The pulse train is coupled to the multiplexer consisting of five waveguides with different lengths, and l00 GHz pulse is generated. By using the modulator integrated on each waveguide, partially coded 100 Gbit/s pulse is obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) modu1ator / short pulse / active mode-locking / optical time division multiplexing
Paper # OCS95-58,OPE95-74,LQE95-68
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Committee OCS
Conference Date 1995/9/29(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Monolithic Semiconductor Devices Integrated with EIectroabsorption Modulators for l00 Gbit/s Pulse Generation
Sub Title (in English)
Keyword(1) modu1ator
Keyword(2) short pulse
Keyword(3) active mode-locking
Keyword(4) optical time division multiplexing
1st Author's Name Kenji Sato
1st Author's Affiliation NIT Opto-electronics Laboratories()
2nd Author's Name Kunishige Oe
2nd Author's Affiliation NIT Opto-electronics Laboratories
Date 1995/9/29
Paper # OCS95-58,OPE95-74,LQE95-68
Volume (vol) vol.95
Number (no) 273
Page pp.pp.-
#Pages 6
Date of Issue