Presentation 1996/7/25
High Power Semiconductor Lasers for Optical Fiber Amplifiers
A. Kasukawa, M. Ohkubo, Y. Ikegami, T. Ijichi, T. Aikiyo, M. Ogai,
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Abstract(in English) We review the state-of-the-art high power semiconductor lasers emitting at 0.98-and 1.48-μm, which are used for the pumping sources of the Er-doped fiber amplifiers.The introduction of strained-layer quantum wells to the active layer enables us to improve the output power of semiconductor lasers. As a result, Er-doped fiber amplifiers with high signal output power are commercially available.
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Keyword(in English) Er-doped fiber amplifier / strained-layer quantum well / catastrophic optical damage
Paper # OCS96-26
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Conference Information
Committee OCS
Conference Date 1996/7/25(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Power Semiconductor Lasers for Optical Fiber Amplifiers
Sub Title (in English)
Keyword(1) Er-doped fiber amplifier
Keyword(2) strained-layer quantum well
Keyword(3) catastrophic optical damage
1st Author's Name A. Kasukawa
1st Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.()
2nd Author's Name M. Ohkubo
2nd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
3rd Author's Name Y. Ikegami
3rd Author's Affiliation Optical Devices Department, Telecommunication Group, The Furukawa Electric Co., Ltd.
4th Author's Name T. Ijichi
4th Author's Affiliation Optical Devices Department, Telecommunication Group, The Furukawa Electric Co., Ltd.
5th Author's Name T. Aikiyo
5th Author's Affiliation Optical Devices Department, Telecommunication Group, The Furukawa Electric Co., Ltd.
6th Author's Name M. Ogai
6th Author's Affiliation Optical Devices Department, Telecommunication Group, The Furukawa Electric Co., Ltd.
Date 1996/7/25
Paper # OCS96-26
Volume (vol) vol.96
Number (no) 188
Page pp.pp.-
#Pages 8
Date of Issue