| Presentation | 2002/6/7 Electron Transport Properties in High-Biased AlGaN/GaN HEMTs Naoteru Shigekawa, Kenji Shiojima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Microscopic electroluminescence (EL) and photoluminescence (PL) measurements of high-biased AlGaN/GaN high-electron-mobility transistors are reported. We observed that the EL intensity reveals peaks around the edge of the channel and the elecron temperature there is higher than the electron temperature at the center of the channel. These EL features were found to be consistent with the change in the junction temperature, which we locally estimated by comparing the PL data with measurements in raised ambient temperatures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HEMT / Electron transport / Electroluminescence / Photoluminescence / Junction Temperature |
| Paper # | ED2002-89 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron Transport Properties in High-Biased AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | Electron transport |
| Keyword(3) | Electroluminescence |
| Keyword(4) | Photoluminescence |
| Keyword(5) | Junction Temperature |
| 1st Author's Name | Naoteru Shigekawa |
| 1st Author's Affiliation | NTT Photonics Laboratories() |
| 2nd Author's Name | Kenji Shiojima |
| 2nd Author's Affiliation | NTT Photonics Laboratories |
| Date | 2002/6/7 |
| Paper # | ED2002-89 |
| Volume (vol) | vol.102 |
| Number (no) | 115 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |