Presentation 2002/6/7
Luminescence dynamics of InGaN single quantum well by time-resolve near-field spectroscopy
Akio KANETA, Giichi MARUTSUKI, Yukio NARUKAWA, Takashi MUKAI, Yoichi KAWAKAMI, Shigeo FUJITA,
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Abstract(in English) Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure using a scanning near-field optical microscope(SNOM) under illumination-collection mode at 18K. The near-field PL images revealed the variation of both intensity and peak energy in PL spectra according to the probing location with the scale less than a few hundreds nm. Clear spatial correlation was observed PL intensity and peak wavelength, where the regions of strong PL intensity correspond to those of long wavelength. Time-resolved SNOM-PL study showed that photo-generated carriers diffuse to localized potential minima, and recombine radiatively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SNOM / time-resolved SNOM-PL / diffuse / localization
Paper # ED2002-75
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Committee ED
Conference Date 2002/6/7(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Luminescence dynamics of InGaN single quantum well by time-resolve near-field spectroscopy
Sub Title (in English)
Keyword(1) SNOM
Keyword(2) time-resolved SNOM-PL
Keyword(3) diffuse
Keyword(4) localization
1st Author's Name Akio KANETA
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Giichi MARUTSUKI
2nd Author's Affiliation Nichia Corporation
3rd Author's Name Yukio NARUKAWA
3rd Author's Affiliation Nichia Corporation
4th Author's Name Takashi MUKAI
4th Author's Affiliation Nichia Corporation
5th Author's Name Yoichi KAWAKAMI
5th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
6th Author's Name Shigeo FUJITA
6th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
Date 2002/6/7
Paper # ED2002-75
Volume (vol) vol.102
Number (no) 115
Page pp.pp.-
#Pages 4
Date of Issue