| Presentation | 2002/6/7 Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor Sakuntam SANORPIM, Fumihiro Nakajima, Shigeyuki IMURA, Eriko TAKUMA, Ryuji KATAYAMA, Kentaro ONABE, Hideki ICHINOSE, Yasuhiro SHIRAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The 250-500 nm-thick LnGaAsN (In = 17.0%, N= 0-2.3%) alloy films were grown on GaAs(001) substrates by metalorganic vapor phase epitaxy (MOVPE) at 600 ℃ with dimethylhydrazine as the N precursor. Low-temperature (11 K) and room temperature photoluminescence (PL) spectra showed a continuous red-shift with increasing N content (0-2.3%). The temperature dependence of the PL spectra is excellent with a near-band-edge emission peak for low N contents (<2.3%). Additionally, the carrier/exciton localization induced by alloy disorders in the microscopic structure was observed. On the other hand, the film with high N content (2.3%) showed that the dominant spectra contain several broad PL bands of unknown origin, in addition to the InGaAsN-related emission. The different luminescence emissions, which corresponded the In- and N-related localization, from the different regions of the In_<0.17> Ga_<0.83> As_<0.977> N_<0.023> alloy film were also observed. Furthermore, from transmission electron microscope images, the nearly defecting free InGaAsN layer was obtained for the films with low N content (1.0%). In contrast, for the films with higher N content (2.3%), the formation of structural defects was clearly observed. Our results suggest that the compositional fluctuation of both In and N, which is responsible for the formation of structural defects as well as for the carrier/exciton localization, increases with increasing N concentration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Compositional fluctuation / Photoluminescence / Carrier localization / Metalorganic vapor phase epitaxy / InGaAsN alloy / Structural disorder |
| Paper # | ED2002-74 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor |
| Sub Title (in English) | |
| Keyword(1) | Compositional fluctuation |
| Keyword(2) | Photoluminescence |
| Keyword(3) | Carrier localization |
| Keyword(4) | Metalorganic vapor phase epitaxy |
| Keyword(5) | InGaAsN alloy |
| Keyword(6) | Structural disorder |
| 1st Author's Name | Sakuntam SANORPIM |
| 1st Author's Affiliation | Department of Advanced Materials Science, The University of Tokyo:Department of Applied Physics, The University of Tokyo() |
| 2nd Author's Name | Fumihiro Nakajima |
| 2nd Author's Affiliation | Department of Advanced Materials Science, The University of Tokyo |
| 3rd Author's Name | Shigeyuki IMURA |
| 3rd Author's Affiliation | Department of Advanced Materials Science, The University of Tokyo |
| 4th Author's Name | Eriko TAKUMA |
| 4th Author's Affiliation | Department of Materials Science, The University of Tokyo |
| 5th Author's Name | Ryuji KATAYAMA |
| 5th Author's Affiliation | Department of Applied Physics, The University of Tokyo |
| 6th Author's Name | Kentaro ONABE |
| 6th Author's Affiliation | Department of Advanced Materials Science, The University of Tokyo:Department of Applied Physics, The University of Tokyo |
| 7th Author's Name | Hideki ICHINOSE |
| 7th Author's Affiliation | Department of Materials Science, The University of Tokyo |
| 8th Author's Name | Yasuhiro SHIRAKI |
| 8th Author's Affiliation | Department of Applied Physics, The University of Tokyo |
| Date | 2002/6/7 |
| Paper # | ED2002-74 |
| Volume (vol) | vol.102 |
| Number (no) | 115 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |