Presentation 2002/6/6
Fabrication of GaN Films by CS-MBE and Its Application to Light-Emitting Devices
Tohru HONDA, Kenichi IGA, Hideo KAWANISHI,
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Abstract(in English) Deposition of light-emitting layer on the glass substrates is required for the application to UV/Blue flat display panels based on GaN. In this paper, we propose GaN-based electroluminescent devises, whose emission layer is deposited at low temperature less than 550 ℃. The GaN films were deposited on the glass using compound source MBE. The photoluminescence spectra of deposited GaN films involved the UV light emission at room temperature. The GaN-based electroluminescent devices, whose emission layer was deposited at the substrate temperature of 450 ℃ show the bluish-white light emission under the AC voltage operation.
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Keyword(in English) GaN / MBE / Cathodoluminescence / Photoluminescence / UV Emission
Paper # ED2002-60
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Committee ED
Conference Date 2002/6/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaN Films by CS-MBE and Its Application to Light-Emitting Devices
Sub Title (in English)
Keyword(1) GaN
Keyword(2) MBE
Keyword(3) Cathodoluminescence
Keyword(4) Photoluminescence
Keyword(5) UV Emission
1st Author's Name Tohru HONDA
1st Author's Affiliation Dept. of Electronic Engineering, Kohgakuin University()
2nd Author's Name Kenichi IGA
2nd Author's Affiliation Dept. of Electronic Engineering, Kohgakuin University
3rd Author's Name Hideo KAWANISHI
3rd Author's Affiliation Dept. of Electronic Engineering, Kohgakuin University
Date 2002/6/6
Paper # ED2002-60
Volume (vol) vol.102
Number (no) 114
Page pp.pp.-
#Pages 4
Date of Issue