Presentation 2002/6/6
The Heating Effect of the Ammonia Injector for the Growth of GaN Thin Films by Ammonia-MBE
T. Shibata, S-W. Kim, M. Akatu, T. Yamada, K. Haga, T. Suzuki,
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Abstract(in English) We discussed the heating effect of ammonia injectors on the growth of GaN thin films by ammonia MBE. First we grew GaN thin film on GaAs substrate with GaNAs buffer layer using ammonia injector without heating Many Ga droplets observed on the surface of the grown sample. PL spectra showed only deep level emission. Then we grew the same structure using heating type ammonia injector. As a result, the density of Ga droplet decreased as the heater temperature increased. PL spectra of GaN thin film grown at the heater temperature of 185℃showed the emission around 380nm. The peak position of the emission is almost that of cubic-GaN.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ammonia-MBE / GaN thin films / GaAs substrate / GaNAs buffer / ammonia injector
Paper # ED2002-57
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Committee ED
Conference Date 2002/6/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The Heating Effect of the Ammonia Injector for the Growth of GaN Thin Films by Ammonia-MBE
Sub Title (in English)
Keyword(1) ammonia-MBE
Keyword(2) GaN thin films
Keyword(3) GaAs substrate
Keyword(4) GaNAs buffer
Keyword(5) ammonia injector
1st Author's Name T. Shibata
1st Author's Affiliation Nippon Institute of Techunology()
2nd Author's Name S-W. Kim
2nd Author's Affiliation Nippon Institute of Techunology
3rd Author's Name M. Akatu
3rd Author's Affiliation Nippon Institute of Techunology
4th Author's Name T. Yamada
4th Author's Affiliation Nippon Institute of Techunology:Chichibu fuji
5th Author's Name K. Haga
5th Author's Affiliation Nippon Institute of Techunology:Chichibu fuji
6th Author's Name T. Suzuki
6th Author's Affiliation Nippon Institute of Techunology
Date 2002/6/6
Paper # ED2002-57
Volume (vol) vol.102
Number (no) 114
Page pp.pp.-
#Pages 4
Date of Issue