| Presentation | 2002/1/21 Fabrication of InGaAs quantum dots formation along GaAs multiatomic steps T. Ishihara, M. Akabori, J. Motohisa, T. Fukui, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The uniform and self-aligned S-K mode InGaAs quantum dots were formed on GaAs multiatomic steps on (001) vicinal surface by MOVPE. Under optimum In content (x=O.8) and InGaAs layer thickness (3.2ML) condition highly uniform InGaAs quantum dots were obtained. The size distribution of InGaAs dots depends on GaAs multiatomic step width strongly. The misorientation angle dependence on the formation of InGaAs quantum dots on GaAs multiatomic steps were also observed by AFM and PL. The results of PL measurement agreed well with AFM results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOVPE / GaAs(001) vicinal substrate / GaAs multiatomic step / S-K mode quantum dot |
| Paper # | 2001-ED-228,2001-SDM-231 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of InGaAs quantum dots formation along GaAs multiatomic steps |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | GaAs(001) vicinal substrate |
| Keyword(3) | GaAs multiatomic step |
| Keyword(4) | S-K mode quantum dot |
| 1st Author's Name | T. Ishihara |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | M. Akabori |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | J. Motohisa |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | T. Fukui |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2002/1/21 |
| Paper # | 2001-ED-228,2001-SDM-231 |
| Volume (vol) | vol.101 |
| Number (no) | 617 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |