Presentation 2002/1/10
1200-MHz Fully Integrated VCO
Nobuyuki Itoh, Shin-ichiro Ishizuka,
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Abstract(in English) Fully integrated VCO with "turbo-charger" technique to improve phase noise characteristics has been presented. The phase noise degradation of relatively lower oscillation frequency in tuning range was caused by oscillation amplitude lowering due to large total capacitance, on the other hand, the phase noise degradation of relatively higher frequency in tuning range was caused by excess current noise. New "turbo charger" circuit was increasing operation current to obtain enough trans-conductance of amplifier when oscillation frequency was lower to improve phase noise characteristics. The phase noise of VCO, which was adapted this technique, was presented extremely low and stable, below -140dBc/Hz at 3MHz offset from oscillation frequency, in wide oscillation frequency range, approximately 200MHz for 1200MHz oscillation. This VCO was worked with 5.8-7.4-mA current consumption under 3-V supply voltage. The manufacturing process was O.6-μm SiGe-BiCMOS.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Fully integrated VCO / SiGe-BiCMOS / Phase noise
Paper # 2001-ED-204,2001-MW-159,2001-ICD-201
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Committee ED
Conference Date 2002/1/10(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 1200-MHz Fully Integrated VCO
Sub Title (in English)
Keyword(1) Fully integrated VCO
Keyword(2) SiGe-BiCMOS
Keyword(3) Phase noise
1st Author's Name Nobuyuki Itoh
1st Author's Affiliation nalog & Peripheral Division, Semiconductor Company, Toshiba Corporation()
2nd Author's Name Shin-ichiro Ishizuka
2nd Author's Affiliation nalog & Peripheral Division, Semiconductor Company, Toshiba Corporation
Date 2002/1/10
Paper # 2001-ED-204,2001-MW-159,2001-ICD-201
Volume (vol) vol.101
Number (no) 550
Page pp.pp.-
#Pages 8
Date of Issue