Presentation	2002/1/9 Device Technologies for High-Performance InP DHBTs Kenji KURISHIMA, Minoru IDA, Noriyuki WATANABE, Kiyoshi ISHII, Takatomo ENOKI, Eiich SANO,
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Abstract(in English)	We have investigated manufacturability of InP DHBTs for the applications to 40Gbit/s optical communications ICs. Our DHBTs feature a carbon-doped InGaAs base and an InGaAs/InGaAsP/InP step-graded collector with its conduction-band potential profile properly controlled by the doping dipole. The fabricated transistors yield current gain of 30,collector breakdown voltage, BV_, of over 8V, and ideal current turn-on behavior up to 1mA/μm^2. Sixty-eight transistors on a 3" substrate exhibit f_T of 131±2GHz and f_of 191±15GHz under the bias conditions of V_ 1.2V and J_c 0.5mA/μm^2. We also fabricated 1/2 static frequency divider ICs with ECL gates configuration and confirmed maximum operation frequency of over 40GHz. This valus is by no means inferior to that of dividers fabricated with conventional SHBTs.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	InP / double-hetrojunction / collector breakdown voltage / current blocking / carbon doping / turn-on voltage
Paper #	2001-ED-193,2001-MW-148,2001-ICD-190
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Committee	ED
Conference Date	2002/1/9(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Device Technologies for High-Performance InP DHBTs
Sub Title (in English)
Keyword(1)	InP
Keyword(2)	double-hetrojunction
Keyword(3)	collector breakdown voltage
Keyword(4)	current blocking
Keyword(5)	carbon doping
Keyword(6)	turn-on voltage
1st Author's Name	Kenji KURISHIMA
1st Author's Affiliation	NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation()
2nd Author's Name	Minoru IDA
2nd Author's Affiliation	NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
3rd Author's Name	Noriyuki WATANABE
3rd Author's Affiliation	NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
4th Author's Name	Kiyoshi ISHII
4th Author's Affiliation	NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
5th Author's Name	Takatomo ENOKI
5th Author's Affiliation	NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation
6th Author's Name	Eiich SANO
6th Author's Affiliation	NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation : (Present address) Research Center for Integrated Quantum Electronics, Hokkaido University
Date	2002/1/9
Paper #	2001-ED-193,2001-MW-148,2001-ICD-190
Volume (vol)	vol.101
Number (no)	549
Page	pp.pp.-
#Pages	6
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