| Presentation | 2002/1/9 110 W AlGaN/Gan Heterojunction FET on Thinned Sapphire Yuji ANDO, Yasuhiro OKAMOTO, Hironobu MIYAMOTO, Tasuo NAKAYAMA, Kensuke KASAHARA, Masaaki KUZUHARA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiN-passivated AlGaN/GaN heterojunction FETs were fabricated on a thinned sapphire substrate. L-band load-pull measurements showed 22.6W (1.4 W/mm) CW power, 41.9% PAE, and 9.4 dB linear gain for a 16 mm-wide device on a 50 μm-thick sapphire biased at Vds=26 V. Also, a 32 mm-wide device on a 50 μm-thick sapphire, measured under pulsed operation, demonstrated 113 W (3.5 W/mm) pulsed power at Vds=40 V. To our best knowledge, 113 W total power is the highest achieved for GaN on any substrate, establishing the validiry of the GaN-on-thinned-sapphire technology. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Sapphire / FET |
| Paper # | 2001-ED-185,2001-MW-140,2001-ICD-182 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 110 W AlGaN/Gan Heterojunction FET on Thinned Sapphire |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Sapphire |
| Keyword(3) | FET |
| 1st Author's Name | Yuji ANDO |
| 1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Yasuhiro OKAMOTO |
| 2nd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 3rd Author's Name | Hironobu MIYAMOTO |
| 3rd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 4th Author's Name | Tasuo NAKAYAMA |
| 4th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 5th Author's Name | Kensuke KASAHARA |
| 5th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 6th Author's Name | Masaaki KUZUHARA |
| 6th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| Date | 2002/1/9 |
| Paper # | 2001-ED-185,2001-MW-140,2001-ICD-182 |
| Volume (vol) | vol.101 |
| Number (no) | 549 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |