| Presentation | 2001/6/29 Fabrications and Properties of Pt/LiNbO_3/AIN/Si (100) Structures for Nonvolatile Memory Application Soon-Won Jung, Sang-Hyun Jeong, Yong-Seong Kim, Kwang-Ho Kim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Metal-ferroelectric-insulator-semiconductor (FMIS) devices using rapid thermal annealed (RTA) LiNbO_3/AlN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS)C-V properties using high dielectric AlN thin films showed no hysteresis and good interface. The dielectric constant of the AlN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO_3 thin films. The typical dielectric constant value of LiNbO_3 film in MFIS device was about 23. The memory window width was about 1.2V in the gate voltage range of ±5V. Typical gate leakage current density of the MFIS structure was the of order of 10^<-9> A/cm^2 at the range of within ±500kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10^<11> switching cycles when subjected to symmetric bipolar voltage pulses(peak-to-peak 8V, 50% duty cycle) of 500kHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric film / nonvolatile memory / LiNbO_3/AlN/Si (100) structure / rapid thermal annealing / fatigue property |
| Paper # | ED2001-86, SDM2001-93 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/6/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrications and Properties of Pt/LiNbO_3/AIN/Si (100) Structures for Nonvolatile Memory Application |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric film |
| Keyword(2) | nonvolatile memory |
| Keyword(3) | LiNbO_3/AlN/Si (100) structure |
| Keyword(4) | rapid thermal annealing |
| Keyword(5) | fatigue property |
| 1st Author's Name | Soon-Won Jung |
| 1st Author's Affiliation | Department of Electronic Engineering, Cheongju University, School of Electronic, Semiconductor, Computer & Communication Engineering, Cheongju University() |
| 2nd Author's Name | Sang-Hyun Jeong |
| 2nd Author's Affiliation | Department of Electronic Engineering, Cheongju University, School of Electronic, Semiconductor, Computer & Communication Engineering, Cheongju University |
| 3rd Author's Name | Yong-Seong Kim |
| 3rd Author's Affiliation | Department of Electronic Engineering, Cheongju University, School of Electronic, Semiconductor, Computer & Communication Engineering, Cheongju University |
| 4th Author's Name | Kwang-Ho Kim |
| 4th Author's Affiliation | Department of Electronic Engineering, Cheongju University, School of Electronic, Semiconductor, Computer & Communication Engineering, Cheongju University |
| Date | 2001/6/29 |
| Paper # | ED2001-86, SDM2001-93 |
| Volume (vol) | vol.101 |
| Number (no) | 161 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |