| Presentation | 2001/6/29 Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method Chang Jung Kim, Insook Yi, Ilsub Chung, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, the ferroelectrics bismuth lanthanum titanate (Bi_<3.25>La_<0.75>Ti_3O_<12>) thin film has been expected as a novel material for FRAM device since it has a large polarization, fatigue free, and crystallized at low temperature compared to SrBi_2Ta_2O_9 material. The BLT thin film was fabricated successfully on Pt/Ti/SiO_2/Si substrate by chemical solution deposition method. The films were crystallized at the temperature range of 600～700℃ using rapid thermal process and quartz tube furnace. X-ray diffraction shows a ferroelectric single-phase film. The spontaneous polarization (Ps) and the switching polarization of BLT film annealed at 700℃ for 2 min are 16.75 and 13.14 uC/cm^2, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BLT / ferroelectric thin film / rapid thermal annealing / furnace annealing / FeRAM |
| Paper # | ED2001-85, SDM2001-92 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/6/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties of BLT thin films prepared by CSD(chemical Solution Deposition)method |
| Sub Title (in English) | |
| Keyword(1) | BLT |
| Keyword(2) | ferroelectric thin film |
| Keyword(3) | rapid thermal annealing |
| Keyword(4) | furnace annealing |
| Keyword(5) | FeRAM |
| 1st Author's Name | Chang Jung Kim |
| 1st Author's Affiliation | Materials and Devices Lab, Samsung Advanced Institute of Technology() |
| 2nd Author's Name | Insook Yi |
| 2nd Author's Affiliation | Materials and Devices Lab, Samsung Advanced Institute of Technology |
| 3rd Author's Name | Ilsub Chung |
| 3rd Author's Affiliation | Materials and Devices Lab, Samsung Advanced Institute of Technology |
| Date | 2001/6/29 |
| Paper # | ED2001-85, SDM2001-92 |
| Volume (vol) | vol.101 |
| Number (no) | 161 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |