講演名 | 2001/6/28 A Formation and Characteristics of the Fluorinated Amorphous Carbon Films with Low Dielectric Constant by HDPCVD , |
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抄録(和) | |
抄録(英) | Fluorinated amorphous carbon (a-C:F) thin films were deposited on a p-type Si(100) substrate using carbon tetrafluoride(CF)_4 and methane(CH_4) mixture gases by an High density plasma chemical vapor deposition(HDPCVD). High density CF_4/CH_4 plasma of about 10^<12> cm^<-3> is obtained at low pressure(200 mTorr) with rf power above 700 W in the ICP source where the CF_4/CH_4 gases are greatly dissociated. Fourier transform infrared(FTIR) and X-ray photoelectron spectroscopy (XPS) spectra show that the film has C-F, C-F_2, C-F_3, C-CF_x and C-C bond. The C-F bond in the film may lower the dielectric constant greatly and the C-C crosslinked structure maintained the film's thermal stability. It is found that the C-F bonding configuration changes from a C-F bond to C-CF_x and C-F_3 bonds as a function of CF_4/CH_4 flow rate ratio. Therefore, the reduction mechanism of the dielectric constant can be obtained by the variation of the C-F_x bonding configuration as well as the incorporation of fluorine. The relative dielectric constant, leakage current density, and dielectric breakdown field strength of the film are about 2.4, 7×10^<-12> A/cm^2, and 12 MV/cm, respectively. |
キーワード(和) | |
キーワード(英) | HDPCVD / dielectric constant / a-C:F thin film / thermal stability |
資料番号 | ED2001-66, SDM2001-73 |
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研究会情報 | |
研究会 | ED |
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開催期間 | 2001/6/28(から1日開催) |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | A Formation and Characteristics of the Fluorinated Amorphous Carbon Films with Low Dielectric Constant by HDPCVD |
サブタイトル(和) | |
キーワード(1)(和/英) | / HDPCVD |
第 1 著者 氏名(和/英) | / Kyoung Suk Oh |
第 1 著者 所属(和/英) | Department of Physics, Cheju National University |
発表年月日 | 2001/6/28 |
資料番号 | ED2001-66, SDM2001-73 |
巻番号(vol) | vol.101 |
号番号(no) | 160 |
ページ範囲 | pp.- |
ページ数 | 8 |
発行日 |