Presentation 2001/5/18
Fabrication and characterization of Si quantum well structures
Takuma Ishihara, Masanori Iwasaki, Toshiaki Tsuchiya, Yasuhiko Ishikawa, Michiharu Tabe,
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Abstract(in English) Ultrathin Si/SiO_2 double barrier structures were fabricated using a silicon-on-insulator (SOI) wafer with an ultrathin thermally-grown buried SiO_2 layer, which was fabricated in our laboratory by a wafer bonding technique. I-V measurements for a sample with -5nm-thick Si showed monotonous increase of the current with increasing the applied voltage, while, for a sample with ~2nm-thick Si, several inflections were observed in the I-V curves. A negative differential resistance was also observed, suggesting the resonant tunneling of electrons through the ultrathin Si layer.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Si / SiO_2 / SOI / double barrier structure / negative differential resistance / resonant tunneling
Paper # ED2001-43,CPM2001-30,SDM2001-43
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Committee ED
Conference Date 2001/5/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and characterization of Si quantum well structures
Sub Title (in English)
Keyword(1) Si
Keyword(2) SiO_2
Keyword(3) SOI
Keyword(4) double barrier structure
Keyword(5) negative differential resistance
Keyword(6) resonant tunneling
1st Author's Name Takuma Ishihara
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Masanori Iwasaki
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Toshiaki Tsuchiya
3rd Author's Affiliation Shimane University
4th Author's Name Yasuhiko Ishikawa
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Michiharu Tabe
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2001/5/18
Paper # ED2001-43,CPM2001-30,SDM2001-43
Volume (vol) vol.101
Number (no) 79
Page pp.pp.-
#Pages 5
Date of Issue