Presentation 2001/5/17
Iodine doping in CdTe layers grown by metalorganic vapor phase epitaxy
Yasumitsu Tomita, Yusuke Masuda, Tomoaki Ishiguro, Yasuhiro Kawauchi, Kazuki Hoki, Hiroshi Morishita, Kazuhito Yasuda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Characteristics of iodine doping in CdTe layers on (100)GaAs have been studied in MOVPE using isopropyliodine(IPI) and ethyliodine(EI) as a n-type dopant. Dimethylcadmium(DMCd), tertialybutyltelluride(DtBTe), diethyltelluride(DETe) and diisopropyltelluride(DiPTe) were used as precursors. Electron densities of doped layers were controlled from 10^<15> to 10^<18>cm^<-3> by controlled growth temperature, iodine supply rate and hotwall temperature. Effect of doping on the growth characterisics was also studied.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) MOVPE / iodine doping / n-type / CdTe / EI / IPI
Paper # ED2001-15,CPM2001-2,SDM2001-15
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Conference Information
Committee ED
Conference Date 2001/5/17(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Iodine doping in CdTe layers grown by metalorganic vapor phase epitaxy
Sub Title (in English)
Keyword(1) MOVPE
Keyword(2) iodine doping
Keyword(3) n-type
Keyword(4) CdTe
Keyword(5) EI
Keyword(6) IPI
1st Author's Name Yasumitsu Tomita
1st Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology()
2nd Author's Name Yusuke Masuda
2nd Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology
3rd Author's Name Tomoaki Ishiguro
3rd Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology
4th Author's Name Yasuhiro Kawauchi
4th Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology
5th Author's Name Kazuki Hoki
5th Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology
6th Author's Name Hiroshi Morishita
6th Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology
7th Author's Name Kazuhito Yasuda
7th Author's Affiliation Department of Electrical and Computer Engineering Nagoya Institute of Technology
Date 2001/5/17
Paper # ED2001-15,CPM2001-2,SDM2001-15
Volume (vol) vol.101
Number (no) 78
Page pp.pp.-
#Pages 6
Date of Issue