| Presentation | 2001/1/11 High Bias Voltage Operation High Power GaAs FP-HFET W. Contrata, K. Matsunaga, K. Ishikura, I. Takenaka, A. Wakejima, K. Ota, M. Kanamori, M. Kuzuhara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes an L-band depletion-mode GaAs-based heterostructure FET (HFET) with a field-modulating plate (FP) for cellular base station applications. A one-cell FP-HFET demonstrated an output power density of 1.7 W/mm at a drain bias of 40 V, indicating strong potential for high voltage operation. An FP-HFET power amplifier, consisting of four 86.4mm gate-width chips, delivered a 53.6dBm (230W) output power at 2.1GHz with 11dB linear gain and 42% PAE operated at a drain bias of 22V. A low adjacent channel leakage power ratio (ACPR) of -35dBc with 25% PAE was obtained at an output power of 46dBm, indicating superior linearity characteristics under elevated drain bias conditions. The device also exhibited a record saturated power density of 0.67W/mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs HFET / field plate / microwave / high power / high bias / low distortion |
| Paper # | ED2000-226,MW2000-175,ICD2000-186 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/1/11(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Bias Voltage Operation High Power GaAs FP-HFET |
| Sub Title (in English) | |
| Keyword(1) | GaAs HFET |
| Keyword(2) | field plate |
| Keyword(3) | microwave |
| Keyword(4) | high power |
| Keyword(5) | high bias |
| Keyword(6) | low distortion |
| 1st Author's Name | W. Contrata |
| 1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation() |
| 2nd Author's Name | K. Matsunaga |
| 2nd Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
| 3rd Author's Name | K. Ishikura |
| 3rd Author's Affiliation | Compound Semiconductor Device Division NEC Corporation |
| 4th Author's Name | I. Takenaka |
| 4th Author's Affiliation | Compound Semiconductor Device Division NEC Corporation |
| 5th Author's Name | A. Wakejima |
| 5th Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
| 6th Author's Name | K. Ota |
| 6th Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
| 7th Author's Name | M. Kanamori |
| 7th Author's Affiliation | Compound Semiconductor Device Division NEC Corporation |
| 8th Author's Name | M. Kuzuhara |
| 8th Author's Affiliation | Photonic and Wireless Devices Research Laboratories NEC Corporation |
| Date | 2001/1/11 |
| Paper # | ED2000-226,MW2000-175,ICD2000-186 |
| Volume (vol) | vol.100 |
| Number (no) | 548 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |