| Presentation | 2001/1/10 A 150 W Power Heterojunction FET with High Efficiency for W-CDMA Base Stations Isao Takenaka, Koji Ishikura, Kazuhiro Kishi, Yasu Ogasawara, Koichi Hasegawa, Fumiaki Emori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An L/S-band highly efficient 150 W GaAs FET amplifier has been developed. The amplifier employed newly developed GaAs pseudomorphic heterojunction FETs (HJFETs) exhibiting high gm and small third order transconductance coefficient characteristics. In addition, we employed the second harmonic tuning for the input and output matching circuit to obtain the high efficiency characteristics. The developed push-pull amplifier demonstrated 51.8 dBm (150W) output-power with 60% power added-efficiency and 14.5 dB linear gain at 2.12 GHz under 12 V operation. It also showed low adjacent channel leakage power ratio (ACPR) of less than -35 dBc with a power-added efficiency of 28 % at an output-power of 43 dBm. It is notable that their performances were obtained under Class-B operation with the quiescent drain current of 1.5 A. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | W-CDMA base station / Heterojunction FET / Push-pull / Low distortion / High efficiency / Class-B operation |
| Paper # | ED2000-225,MW2000-174,ICD2000-185 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2001/1/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 150 W Power Heterojunction FET with High Efficiency for W-CDMA Base Stations |
| Sub Title (in English) | |
| Keyword(1) | W-CDMA base station |
| Keyword(2) | Heterojunction FET |
| Keyword(3) | Push-pull |
| Keyword(4) | Low distortion |
| Keyword(5) | High efficiency |
| Keyword(6) | Class-B operation |
| 1st Author's Name | Isao Takenaka |
| 1st Author's Affiliation | Compound Semiconductor Device Division, NEC Corporation() |
| 2nd Author's Name | Koji Ishikura |
| 2nd Author's Affiliation | Compound Semiconductor Device Division, NEC Corporation |
| 3rd Author's Name | Kazuhiro Kishi |
| 3rd Author's Affiliation | Microwave Device Department, NEC Yamagata Ltd. |
| 4th Author's Name | Yasu Ogasawara |
| 4th Author's Affiliation | Microwave Device Department, NEC Yamagata Ltd. |
| 5th Author's Name | Koichi Hasegawa |
| 5th Author's Affiliation | Compound Semiconductor Device Division, NEC Corporation |
| 6th Author's Name | Fumiaki Emori |
| 6th Author's Affiliation | Compound Semiconductor Device Division, NEC Corporation |
| Date | 2001/1/10 |
| Paper # | ED2000-225,MW2000-174,ICD2000-185 |
| Volume (vol) | vol.100 |
| Number (no) | 547 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |